The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.
The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ω input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF FrontEnd Mobile (FEM) Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.
The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.
• High efficiency
• Programmable bias for improved backed-off efficiency (MIPI 2.1)
• High linearity for 8PSK
• Low stand-by leakage
• Compatible with DC-DC converter
• Autonomous Over-voltage Protection
• Vramp GMSK/EDGE Power Control Mode
• Linear GMSK/EDGE Power Control Mode
• Flip-chip package
• Small, low profile package
- 3.0 mm x 3.5 mm x 0.67 mm Typical
- 12-pads configuration
• Quad-band cellular handsets
• GMSK Modulation
- Class 4 GSM850/EGSM900 Band
- Class 1 DCS1800/PCS1900 Band
- Class 12 GPRS multi-slot operation
• EDGE Modulation
- Class E2 GSM850/EGSM900
- Class E2 DCS1800/PCS1900
- GROUP2G PA
- FUNCTIONQuad-band GSM/GPRS/EDGE
- PACKAGELGA 3.5×3.0×0.67mm
