针对5G应用设计的高线性度放大器，支持更高阶的调制方式，满足5G通信需求。更高集成度的产品集成低噪声放大器、滤波器，简化射频前端电路设计调试难度，提供更多载波聚合功能，减小电路占用面积。发射与接收系统，可搭建完整的射频前端电路。SRS能实现各种灵活的天线配置方案。
GROUP | Part | Function | Package |
5G Phase 5N MMMB PA | 3G/LTE/NR，HB/MB/LB, 4HB/5MB/5LB | LGA 4.0 x 6.8 x 0.75 mm | |
5G Phase 5N MMMB PA | OM9902-15 | 3G/LTE/NR，4HB | LGA 4.0 x 6.8 x 0.75 mm |
5G Phase 5N MMMB PA | OM9901-11 | Quad-band GSM/GPRS/EDGE | LGA 3.0 x 3.5 x 0.67 mm |
4G MMMB PA | OM8443-63 | Phase II, HB/MB/LB, 4HB/5MB/5LB | LGA 4.0 x 6.8 x 0.72 mm |
4G MMMB PA | OM8443-25 | Phase II, HB/MB/LB, 4HB/5MB/5LB | LGA 4.0 x 6.8 x 0.83 mm |
| 5G Phase7 L-PAMiF | OM9577-11 | 5G L-PAMiF N77/78 1T1R | LGA 5.0 x 3.0 x 0.75 mm |
5G Phase7 L-PAMiF | OM9576-11 | 5G L-PAMiF N77/78 1T2R | LGA 5.0 x 3.0 x 0.75 mm |
5G L-FEM | OM1502-11 | 5G L-FEM N77/78 1R | LGA 2.0 x 1.6 x 0.70 mm |
5G L-FEM | OM1507-11 | 5G L-FEM N77/78 2R | LGA 2.8 x 2.6 x 0.75 mm |
5G LNA BANK | OM1603-11 | LNA bank for multi-band applications | LGA 2.9 x 2.9 x 0.75 mm |
4G TXM CMOS | OM8828-21 | Quad-Band GSM / GPRS / EDGE, 16 TRx Switch, Dual-Band TD-SCDMA, TDD LTE Band 39, Two Antenna Ports | LGA 5.5 x 5.5 x 0.78 mm |
4G TXM CMOS | OM8820-21 | Quad-Band GSM / GPRS / EDGE, 16 TRx Switch, Dual-Band TD-SCDMA, TDD LTE Band 39 | LGA 5.5 x 5.5 x 0.78 mm |
4G TXM | OM8816-51 | QUAD-BAND GSM/GPRS/EDGE，14TRx Switch，TDD-LTE | LGA 5.5 x 5.3 x 0.74 mm |
5G SRS/Band Switch | DPDT Switch, GPIO | LGA 1.1 mm x 1.5 mm x 0.4 mm | |
5G SRS/Band Switch | DPDT Switch, GPIO | LGA 1.1 mm x 1.5 mm x 0.4 mm | |
5G SRS/Band Switch | 3P3T Switch, MIPI | LGA 2.0 mm x 2.0 mm x 0.5 mm | |
5G SRS/Band Switch | DP4T Switch, MIPI | LGA 2.0 mm x 2.0 mm x 0.5 mm | |
5G SRS/Band Switch | SP4T Switch, MIPI | LGA 1.1 mm x 1.1 mm x 0.4 mm | |
5G SRS/Band Switch | SP3T Switch, MIPI | LGA 1.1 mm x 1.1 mm x 0.4 mm | |
5G SRS/Band Switch | SPDT Switch, GPIO | LGA 1.1 mm x 0.7 mm x 0.4 mm |
产品优势：
1) 集成、分立两套方案满足不同需求
2) 可搭配单独2G PA，兼容2G退网区域要求
3) 集成方案具有极小的射频前端电路面积
4) 集成方案提供丰富的载波聚合组合
5) 集成方案大大减少匹配调试
6) 分立方案具有极高的灵活性，适配不同区域网络制式和要求
7) SRS开关种类丰富，低插损，高隔离度
