Product

OM9901-11

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Product Description

The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.

The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ω input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.

The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.


Product Features

 High efficiency

 Programmable bias for improved backed-off efficiency

 High linearity for 8PSK

 Low stand-by leakage

 Compatible with DC-DC converter

 Autonomous Over-voltage Protection

 Vramp GMSK Power Control Mode

 Flip-chip package

 Small, low profile package

        • 3.0 mm x 3.5 mm x 0.67 mm Typical

        • 12-pads configuration


Applications

 Quad-band cellular handsets

 GMSK Modulation

        • Class 4 GSM850/EGSM900 Band

        • Class 1 DCS1800/PCS1900 Band

        • Class 12 GPRS multi-slot operation

 EDGE Modulation

        • Class E2 GSM850/EGSM900

        • Class E2 DCS1800/PCS1900


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Functional Block Diagram

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