The OM9901-91 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.
The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ω input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile (FEM) Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.
The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.
• High efficiency
• Programmable bias for improved backed-off efficiency
• High linearity for 8PSK
• Low stand-by leakage
• Compatible with DC-DC converter
• Autonomous Over-voltage Protection
• Linear GMSK/EDGE Power Control Mode
• Flip-chip package
• Small, low profile package
- 3.0 mm x 3.5 mm x 0.67 mm Typical - 12
- pads configuration
• AEC-Q100 Compliance
• Quad-band cellular handsets
• GMSK Modulation
- Class 4 GSM850/EGSM900 Band
- Class 1 DCS1800/PCS1900 Band
- Class 12 GPRS multi-slot operation
• EDGE Modulation
- Class E2 GSM850/EGSM900
- Class E2 DCS1800/PCS1900
- GROUP2G PA
- FUNCTIONQuad-band GSM/GPRS/EDGE
- PACKAGELGA 3.5×3.0×0.67mm
